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Tezzaron's Patented Technologies:

3T-iRAM ®

3T-iRAM - Ultra-fast 3T memory cell with current-sensing circuitry for SDRAM with pseudo-SRAM performance

 

FaStack ®

FaStack - Wafer stacking technology for 3D devices

 

Bi-STAR ®

Bi-STAR - Built in self-test and repair circuitry for continuous error detection and recovery

 

TufFRAM®

TufFRAM - Durable FRAM using proprietary ferroelectric material

 

bulletPSiRAM™ - Early prototype, now produced as 3T-iRAM

 

Copyright © 2002-2009 Tezzaron® Semiconductor.  All rights reserved.  Revised: February 23, 2009
 

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