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Tezzaron's Patented Technologies

 

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®

Ultra-fast 3T memory cell with current-sensing circuitry
for SDRAM with pseudo-SRAM performance

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®

Wafer stacking technology
for 3D devices

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TM

Built in self-test and repair circuitry
for continuous error detection and recovery

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TufFRAM®

Durable FRAM using proprietary ferroelectric material

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PSiRAM™ - Early prototype, now produced as 3T-iRAM

Copyright © 2002-2007 Tezzaron® Semiconductor.  All rights reserved.  Revised: July 30, 2008
 

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