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72 Mb Quad Rate II+ Latency 2.0

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bulletTSC4Q272T Data Sheet rev 1.0 (Adobe .pdf format)

72Mb Synchronous Quad Transfer Rate (QTRII+™) 3T-iRAM®, Burst of 4, 2.0 Cycle Read Latency; SRAM-Compatible

Error-resistant 3T-iRAM® technology
300 MHz to 400 MHz clock
Separate independent Read and Write data ports
Concurrent Read/Write transactions are supported
Dual DDRII+ interface (data rate is twice clock speed)
Pin-compatible with QDRII+™ SRAMs
2.0 clock cycle Read latency
Burst of 4 Read and Write
Separate Port Selects for depth expansion
Synchronous internally self-timed Writes
Full data coherency
2 input clocks and 2 echo clocks
1.8 V ±100 mV core power supply
1.5 V ±100 mV I/O power supply
HSTL I/O with variable drive output buffers
ZQ pin for programmable output drive strength
QVLD pin indicates valid output data
IEEE 1149.1 JTAG-compliant Boundary Scan
Lead-free JEDEC-standard pinout and package
165-bump 15mm x 17mm BGA, 1 mm bump pitch
Pin-compatible with 9Mb, 18Mb, 36Mb, and 144Mb devices

3T-iRAM® is a unique type of dynamic memory. Tezzaron has crafted these pseudo-static devices to provide entirely SRAM-compatible interfaces and timing. The unique design of these 3T memories provides soft error rates up to 10 times lower than equivalent high-speed, high-density SRAMs, while maintaining drop-in compatibility.

QTRII+™ (Quad Transfer Rate II+) is a Separate I/O architecture that makes these devices drop-in compatible with QDRII+™ SRAMs. It uses two separate ports for Read and Write operations with dedicated data input and output pins and a common address bus. This completely eliminates the “bus turn-around” time required in Common I/O devices. To maximize throughput, both data ports use DTRII+™ (Double Transfer Rate II+) interfaces.

These pipelined synchronous 72Mb devices employ two input register "K" clocks. These are independent single-ended clock inputs, not differential inputs, for precise data timing. Read and Write addresses are latched on alternate rising edges of the K clock. Data transfers (input and/or output) occur on the rising edges of both clocks. Two echo clocks simplify data capture for Reads. Writes are self-timed with on-chip circuitry.

These devices always transfer data in four packets. A0 and A1 are internally set to 0 for the first read or write transfer and automatically incremented by 1 for each of the next three transfers.

Speed Parameter Synopsis:   -400 -375 -333 -300
 (all units ns) tKHKH 2.50 2.66 3.00 3.30
  tKHQV 0.45 0.45 0.45 0.45

For pricing and availability, contact sales@tezzaron.com

Related Pages:

bulletSRAM Replacement Products
bullet3T-iRAM® Technology
Copyright © 2007-2009 Tezzaron® Semiconductor.  All rights reserved.  Revised: May 12, 2011
 

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