3D Stacked DRAM Products with Bi-STAR®
These 3D memory devices employ Tezzaron’s revolutionary
FaStack® technology to integrate several layers of DRAM
with a powerful controller layer. DRAM layer is denser than a single-layer DRAM device, so the
integrated stack boasts truly dramatic density and consumes far less power per bit than single-layer
DRAMs.
In addition to the memory layers, each stacked device incorporates a layer of circuitry with an
on-board microcontroller that manages the memory stack and provides a seamless standard interface.
The controller layer also contains Tezzaron’s patented
Bi-STAR® self-test-and-repair circuitry to test the chip at
power-up, remap any failed cells, continuously monitor and repair the device, and invisibly correct
both hard and soft errors.
